Semiconductor element drive device with level shift circuit...

Details Semiconductor element drive device with level shift circuit... Semiconductor element drive device with level shift circuit...

2011-06-07

2011-06-07

Behm, Harry (Department: 2838)

Electric power conversion systems

Current conversion

Using semiconductor-type converter

C363S098000

Reexamination Certificate

active

07957167

ABSTRACT:
A high-reliability IGBT drive device in which the high- and low-voltage side IGBTs are complementarily ON/OFF controlled before and after dead time. A reset pulse that turns OFF the high-voltage side IGBT is generated during the dead time as described in the following example. The reset pulse is generated immediately before an ON instruction for the low-voltage side IGBT, so that a period that begins immediately before the ON instruction for the low-voltage side IGBT and overlaps with the ON instruction, continuously during the dead time, continuously during dead time immediately before the low-voltage side IGBT turns ON, or in such a manner as to invalidate the ON instruction for the low-voltage side IGBT when an ON state of the high-voltage side IGBT is observed.

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Chinese Office Action dated Oct. 10, 2008 with partial English translation (Nine (9) pages).
Japanese Office Action dated Sep. 24, 2008 (Three (3) pages).

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