Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1999-06-25
2000-05-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 96, 257 97, 257184, 257201, H01L 2906, H01L 31072, H01L 31109, H01L 310328, H01L 310336
Patent
active
060693673
ABSTRACT:
The purpose of the present invention is to provide a semiconductor light-emitting element that can reduce an operational voltage by improving a contact construction with a p-side electrode. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer, a compositional gradient super-lattice layer, and a low defect contact layer are sequentially laminated on an n-type substrate. The compositional gradient super-lattice layer is formed by alternately laminating p-type ZnTe layers and p-type ZnSe layers. The p-type ZnTe layers are formed to be thickened toward the side of the low defect contact layer. The thickness of the low defect contact layer must be 5 nm or less. Relaxing lattice distortion reduces defect density of the low defect contact layer. Accordingly, the increase in the operational voltage immediately after energization is suppressed, and the operational voltage becomes lower.
REFERENCES:
patent: 5442204 (1995-08-01), Mengz
patent: 5521396 (1996-05-01), Shakuda
patent: 5828086 (1998-10-01), Ishibashi et al.
patent: 5900642 (1999-05-01), Nakatsu et al.
Kijima Satoru
Okuyama Hiroyuki
Taniguchi Satoshi
Tomiya Shigetaka
Tsukamoto Hironori
Ngo Ngan V.
Sony Corporation
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