Semiconductor element and process for production for the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

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257284, H01L 2980, H01L 31112

Patent

active

055788440

ABSTRACT:
There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.

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Patent Abstracts of Japan, vol. 15, No. 204 (E-1071) 24 May 1991 & JP-A-03 057 228 (NEC Corp) 12 Mar. 1991 * abstract *.
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Patent Abstracts of Japan, vol 16, No. 23 (E-1157) 21 Jan. 1992 & JP-A-03 240 243 (OKI Electric Ind Co Ltd) 25 Oct. 1991 * abstract *.
Proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, 1991, Seattle, Washington, USA, 9-12 Sep. 1991, pp. 199-202, Yukiharu Shimamoto et al., `Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implementation`.
Semiconductor Science and Technology, vol. 7, No. 5, May 1992, London GB, pp. 695-687, Eun Kyu Kim et al. `Schottky Diode Characteristics and Deep Levels on Hydrogenated N-Type GaAs`.
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Shinshu University Technical Report ED91-151, pp. 95-99 (1991), Naotaka Iwata et al., "High-Power GaAs MESFETs with i-GaAs Layers on the Channels" with its English abstract.
Shinshu University Technical Report ED91-152, pp. 101-105 (1991), Hidemasa Takahashi et al., "Undoped Surface Layer Recessed-Gate Power MES " with its English abstract.
Inst. Phys. Conf. Ser. No. 120: Chapter 3, pp. 119-124 (1992), Naotaka Iwata et al., "Extensive study on the effects of undoped GaAs layers on MESFET channels and its application for Ku-band extra high output power devices".
IDEM 91, pp. 259-262 (1991), H. Takahashi et al., "Step-Recessed Gate GaAs FETs With An Undoped Surface Layer".
IEEE Electron Device Letters, vol. 13, No. 6, pp. 335-337, Jun. 1992, Chang-Lee Chen et al., "High-Breakdown-Voltage MESFET with a Low-Temperature-Grown GaAs Passivation Layer and Overlappin Gate Structure".
IEEE Electron Device Letters, vol. 11, No. 12, pp. 561-563, Dec. 1990, L.-W. Yin et al., "Improved Breakdown Voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at Low Temperature by MBE".
Shinshu University Technical Report SSD85-130, pp. 23-28 (1985), S. Asai et al., "LDD Structure N+ GaAs MESFETs Fabricated by Pattern Inversion Method with its English abstract".

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