Static information storage and retrieval – Read only systems – Semiconductive
Patent
1996-02-13
1997-11-04
Nelms, David C.
Static information storage and retrieval
Read only systems
Semiconductive
365103, 365 94, G11C 1700
Patent
active
056847343
ABSTRACT:
A semiconductor memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against the noises. In order to accomplish this a control electrode is formed to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile memory device can be realized with reduced size.
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S. Tiwari et al, "A Low Power 77 K Nano-Memory with Single Electron Nano-Crystal Storage", 53rd Annual Device Research Conference Digest, 1995, pp. 50-51.
T. Hashimoto et al, "An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects", 21st Conference on Solid State Devices and Materials, 1989, pp. 97-100.
K. Yano et al, "Room-Temperature Single-Electron Memory", IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1628-1638.
Nikkei Electronics, No. 444, 1988, pp. 151-157.
Ishii Tomoyuki
Kobayashi Takashi
Mine Toshiyuki
Seki Koichi
Yano Kazuo
Hitachi , Ltd.
Hoang Huan
Nelms David C.
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