Semiconductor element, and method of forming silicon-based film

Details Semiconductor element, and method of forming silicon-based film Semiconductor element, and method of forming silicon-based film

2005-02-22

2005-02-22

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S448000, C428S333000, C136S258000, C136S261000, C438S489000, C438S479000, C438S482000

Reexamination Certificate

active

06858308

ABSTRACT:
The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

REFERENCES:
patent: 6103138 (2000-08-01), Kondo
patent: 6166319 (2000-12-01), Matsuyama
patent: 6303945 (2001-10-01), Saito et al.
patent: 6383576 (2002-05-01), Matsuyama
patent: 0895291 (1999-02-01), None
patent: 11-233803 (1999-08-01), None
patent: 11233803 (1999-08-01), None
patent: 11-310495 (1999-11-01), None

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