Semiconductor element and method for producing the same

Details Semiconductor element and method for producing the same Semiconductor element and method for producing the same

2007-02-27

2007-02-27

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S033000, C438S068000, C438S460000, C438S508000

Reexamination Certificate

active

10601310

ABSTRACT:
A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate1sis polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

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Chinese Office Action dated Apr. 1, 2005, with English Translation.

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