Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-05-17
2005-05-17
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S103000
Reexamination Certificate
active
06894317
ABSTRACT:
A semiconductor element including an electrically insulating substrate, semiconductor layers including first and second semiconductor layers of different conduction types and formed on the electrically insulating substrate, a first electrode formed on the first semiconductor layer, and a second electrode formed on the second semiconductor layer revealed by etching at least the first semiconductor layer, wherein a die-bonding electrode is formed on a side surface of the second electrode, on a side surface of the second semiconductor layer and on a region of from a side surface to a bottom surface of the electrically insulating substrate. Metal-metal contact is formed between the die-bonding electrode and the side surface of the second electrode, so that low-resistance contact is obtained here.
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patent: 08-102549 (1996-04-01), None
patent: 08-255926 (1996-10-01), None
Toyoda Gosei Co,., Ltd.
Wille Douglas
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