Semiconductor element and manufacturing method thereof

Details Semiconductor element and manufacturing method thereof Semiconductor element and manufacturing method thereof

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

C257S335000, C257S343000, C438S301000, C438S306000

Reexamination Certificate

active

06900520

ABSTRACT:
A semiconductor element includes a substrate and a first DMOS element formed on a first portion of the substrate. The DMOS element includes a gate electrode that is formed to have slanted side walls. The semiconductor element also includes a first MOS element formed on a second portion of the substrate that is separate from the first portion.

REFERENCES:
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patent: 5751054 (1998-05-01), Yilmaz et al.
patent: 5920781 (1999-07-01), Imoto
patent: 6015991 (2000-01-01), Wheeler et al.
patent: 6040593 (2000-03-01), Park
patent: 6252279 (2001-06-01), Kim
patent: 6392275 (2002-05-01), Jang

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