Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-02-27
2007-02-27
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S095000
Reexamination Certificate
active
10989657
ABSTRACT:
A nitride semiconductor light emitting element is provided with: a substrate11having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer14formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer16formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer14toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate11being used as the main light emitting surface. Furthermore, a translucent conductive layer17is formed between reflective layer16and the nitride semiconductor layer of the second conductivity type, and an uneven interface22is formed as the interface between translucent conductive layer17and reflective layer16.
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Ichihara Takashi
Kususe Takeshi
Sanga Daisuke
Yamada Takao
Nichia Corporation
Prenty Mark V.
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