Semiconductor element and manufacture thereof

Fishing – trapping – and vermin destroying

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437 60, 437193, 437200, 437918, 437944, H01L 21266, H01L 21283

Patent

active

051983826

ABSTRACT:
A method of fabricating a polycide semiconductor element in which a lift-off mask is formed on a first region of a layer of polysilicon. A first dopant is implanted into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask. A layer of silicide is forced over the implanted regions and the lift-off mask and then the lift-off mask and the respective part of the layer of silicide which is deposited thereover are removed thereby to expose the first region. The method may be used to fabricate a resistive device in a polycide semiconductor element. There is also disclosed a semiconductor element, e.g. a resistive device, made by the method.

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Abdel, et al, Solid State Electronicsvol. 30, No. 4, 1987, pp. 361-363.

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