Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1993-05-05
1999-11-30
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 94, 257101, 372 45, 372 46, 372 50, H01L 3300
Patent
active
059947233
ABSTRACT:
An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type on an upper portion of a luminescent layer. In one portion of the above-described layer, an area for a current path consisting of the second conductivity type is formed extending from the second semiconductor layer to the first semiconductor layer. An ohmic contact electrode is then created covering substantially the entire upper surface of the second semiconductor layer with the exception of the area defined for the current path.
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Imanaka Koichi
Sekii Hiroshi
Baumeister Bradley William
Jackson, Jr. Jerome
Omron Corporation
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