Semiconductor element and its manufacturing method

Details Semiconductor element and its manufacturing method Semiconductor element and its manufacturing method

2006-02-21

2006-02-21

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S087000, C117S090000, C117S093000, C117S094000, C117S095000, C117S104000, C117S935000

Reexamination Certificate

active

07001460

ABSTRACT:
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

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