Semiconductor element and a method for producing the same

Details Semiconductor element and a method for producing the same Semiconductor element and a method for producing the same

2011-03-15

2011-03-15

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257SE21014, C257SE21561

Reexamination Certificate

active

07906802

ABSTRACT:
Some embodiments comprise a plurality of fins, wherein at least a first fin of the plurality of fins comprises a different fin width compared to a fin width of another fin of the plurality of fins. At least a second fin of the plurality of fins comprises a different crystal surface orientation compared to another fin of the plurality of fins.

REFERENCES:
patent: 2005/0269629 (2005-12-01), Lee et al.
patent: 2007/0045736 (2007-03-01), Yagishita
patent: 2008/0054361 (2008-03-01), Siprak
patent: 2008/0121948 (2008-05-01), Kim et al.
patent: 2008/0122015 (2008-05-01), Baumgartner
patent: 2008/0169495 (2008-07-01), Orner et al.
patent: 10 2007 056 741 (2008-06-01), None
Sze S. M., “Semiconductor devices, physics and technology”, 2002, pp. 186-188.
Baumgartner, P., et. al., “Semiconductore Device Having Different Fin Widths,” Jun. 17, 2008, US Provisional Patent Application.

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