Semiconductor element

Details Semiconductor element Semiconductor element

2008-05-23

2011-10-11

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

With means to limit area of breakdown

C257S603000, C257S481000, C257SE29335

Reexamination Certificate

active

08035195

ABSTRACT:
A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.

REFERENCES:
patent: 7728402 (2010-06-01), Zhang et al.
patent: 2002/0182831 (2002-12-01), Tsuchiaki
patent: 2005/0258455 (2005-11-01), Schulze et al.
patent: 10 2004 005 084 (2005-08-01), None
patent: 1 608 025 (2005-12-01), None
patent: WO 98/52232 (1998-11-01), None

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