Semiconductor element

Details Semiconductor element Semiconductor element

2005-10-06

2008-10-14

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257SE33063, C438S650000, C438S686000

Reexamination Certificate

active

07436066

ABSTRACT:
It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.

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Kim, Jong Kyu et al., Microstructural study of Pt contact on p-type GaN, Journal of Vauum Science and Technology B, vol. 21, Issue 1, pp. 87-90, Jan. 2003.

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