Semiconductor element

Details Semiconductor element Semiconductor element

2007-07-10

2007-07-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S147000, C257SE29036, C257SE29038

Reexamination Certificate

active

11617854

ABSTRACT:
A semiconductor element includes a first semiconductor layer of a first conductivity type including a non-deposition region and a deposition region. The first semiconductor layer has a first upper surface on the non-deposition region. The semiconductor element also includes a second semiconductor layer of a second conductivity type on the deposition region of the first semiconductor layer. The second semiconductor layer has a second upper surface. The semiconductor element includes first and second electrode layers on the first and second semiconductor layers, respectively, which define an inclined surface for continuous connection therebetween. The semiconductor element includes an insulating layer on the inclined surface, spaced from at least either one of the first and second electrode layers. At least either one of the first and second semiconductor layers includes a recessed portion between the respective one of the first and second electrode layers and the insulating layer.

REFERENCES:
patent: 4618877 (1986-10-01), Araki et al.
patent: 2004/0183093 (2004-09-01), Oota et al.
patent: 55-15204 (1980-02-01), None
patent: 62-136875 (1987-06-01), None
patent: 63-173363 (1988-07-01), None

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