Semiconductor element

Equipment for production – distribution – or transformation of ene – Distribution – modification or control – Semiconductor – transistor or integrated circuit

Design Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Design Patent

active

D0485242

CLAIM:
The ornamental design for a semiconductor element, as shown and described.

REFERENCES:
patent: 4685996 (1987-08-01), Busta et al.
patent: 5176557 (1993-01-01), Okunuki et al.
patent: 5201681 (1993-04-01), Okunuki et al.
patent: 5399238 (1995-03-01), Kumar
patent: 5482002 (1996-01-01), Kawade et al.
patent: 5572041 (1996-11-01), Betsui et al.
patent: 5861707 (1999-01-01), Kumar
patent: 6051849 (2000-04-01), Davis et al.
patent: 6185013 (2001-02-01), Harrington et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 2830814 (1998-12-01), None
patent: 2000-150391 (2000-05-01), None
patent: WO 02/07231 (2002-01-01), None
patent: WO 02/07232 (2002-01-01), None
D. Kapolnek et al., “Spatial control of InGaN luminescence by MOCVD selective epitaxy,” Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998).
J. Wang et al., “Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth,” Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999).
W. Yang et al., “Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth,” Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999).
Raj Singh et al., “Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique,” MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998).
Zhigang Mao et al., “Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth,” MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999).
Koichi Tachibana et al., “Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature,” Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000).
Takao Someya et al., “Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser,” Oyo Butsuri (Applied Physics), vol. 69, No. 10, pp. 1198-1199, (2000) with partial translation.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3231821

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.