Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1985-12-24
1989-12-05
Tarcza, Thomas H.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 30, 357 29, 250330, 250372, 25037001, 25037008, H01L 2714, H01L 3100
Patent
active
048856207
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
1. Technical Field
The invention relates to a semiconductor element and in particular to a semiconductor element which may be used for such purposes as detecting particles or radiation.
2. Background Art
A semiconductor element designed for the specific use as a semiconductor detector is disclosed in publication 33523 of the Brookhaven National Laboratory, August 1983. In the case of this known detector, which is also known as a semiconductor drift chamber, the position of the incident particles in an electric transverse field can be determined by means of the drift time of the majority carriers. In the publication, the minority carriers are the electrons in an n-doped semiconductor body. This publication also describes various modifications to the semiconductor detector. According to one modification, the semiconductor detector can be used as a CCD for the majority carriers.
In the known semiconductor detector, the semiconductor body is completely depleted of the majority carriers by the bias applied from both main surfaces, so that there is a potential minium for the majority carriers within the body. The majority carriers are collected and moved in this potential minimum. However, no attention is paid to the minority carriers. It is an object of the present invention to utilize the movement of minority carriers as well as majority carriers.
DISCLOSURE OF THE INVENTION
The present invention has recognized that the existence of the potential minimum for the majority carriers, which simultaneously represents a potential maximum for the minority carriers, permits a planned influencing of the quantity, movement direction and/or speed of the minority carriers. This leads to a number of additional possible uses for the semiconductor elements according to the invention.
As a result of the configuration of each of the potential maxima for the minority carriers, the basic region of a semiconductor element is subdivided into a plurality of parts on either side which are independent for purposes of the minority carriers. Among other uses, this makes it possible to simulate an epitaxial layer with a comparatively thick semiconductor body and a potential maximum positioned closely below one main semiconductor surface in which there are further regions which form the electronic elements. Thus it is possible with a comparatively thick basic body to achieve the advantages of an epitaxial layer with respect to the cutoff frequency, reverse currents, etc.
As a result of a special geometrical configuration, it is also possible to produce several potential maxima, by means of a sandwich construction in a basic region in which the p and n-doped regions alternate. It is also possible to use a cylindrical configuration, in which the potential maximum is located in the cylinder axis.
Particularly if the semiconductor element according to the invention is used as a detector for particles and/or radiation such as .gamma. and x-radiation, but also for detecting radiation with wavelengths from the UV to the infrared, it is advantageous that a minority carrier signal be produced on each main surface by subdividing the semiconductor body into at least two parts which are independent for purposes of the minority carriers. Thus, each main surface is supplied by minority carriers formed in different parts of the semiconductor body which can then be further processed in different ways. For example, the minority carrier signal at the main surface of the semiconductor body can be used as a trigger signal for determining majority carrier transit time. In addition, the minority carrier signals can be used for determining the position and/or energy and range of the incident radiation. It is possible to readout the minority carrier signal "rapidly" or to use the semiconductor detector the as a charge-coupled device for the minority carrier signals.
The direction of movement and/or the speed of the minority carriers can also be influenced by the path of the potential beneath the main surfaces. The path of the potential can also
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Kemmer Josef
Lutz Gerhard
Sotomayor John B.
Tarcza Thomas H.
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