Semiconductor electron-current generating device having improved

Details Semiconductor electron-current generating device having improved Semiconductor electron-current generating device having improved

1987-03-05

1989-01-31

Edlow, Martin H.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

357 13, 357 16, 357 17, 357 58, 313346R, 313499, 313366, H01L 3300, H01L 2934, H01L 2912

Patent

active

048019941

ABSTRACT:
By providing an intrinsic semiconductor region in a reverse biased junction cathode between an n-type surface region and a p-type zone, a maximum field is present over the intrinsic region in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, while in addition electrons to be emitted at a sufficient energy are generated by means of tunneling.

REFERENCES:
patent: 4000503 (1976-12-01), Matare
patent: 4259678 (1981-03-01), Van Gorkom et al.
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4325084 (1982-04-01), Van Gorkom et al.
patent: 4352117 (1982-09-01), Cuomo et al.
patent: 4506284 (1985-03-01), Shannon
patent: 4516146 (1985-05-01), Shannon et al.

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