Semiconductor electroabsorption optical modulator

Details Semiconductor electroabsorption optical modulator Semiconductor electroabsorption optical modulator

1997-06-17

1999-09-14

Epps, Georgia

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359181, G02F 1025, G02F 1015

Patent

active

059531495

ABSTRACT:
A semiconductor optical modulator is provided, which is capable of stable modulation operation against the detune fluctuation. This modulator includes a semiconductor optical absorption layer formed on or over a semiconductor substrate, and a pair of electrodes arranged at each side of the absorption layer for applying an electric field to the absorption layer. A detune is determined in such a way that a changing rate in refractive-index of the absorption layer generated on application of a fixed biasing electric-field to the absorption layer increases from its initial value at the time no biasing electric-field is applied. When a signal electric-field is additionally applied to the absorption layer by introducing an incident light into the absorption layer while applying the biasing electric-field, (a) the changing rate in refractive-index of the absorption layer is decreased or substantially unchanged due to the applied signal electric-field with respect to a value under application of the biasing electric-field, and at the same time, (b) the absorption coefficient of the absorption layer is increased from its initial value at the time the signal electric-field is not applied and the biasing electric-field is applied.

REFERENCES:
patent: 5521738 (1996-05-01), Froberg et al.
patent: 5732097 (1998-03-01), Yamaguchi et al.
1995 IEICE General Meeting, pp. 349, C-349. "Low-chirp, low-polarization dependent characteristics of electroabsorption optical intensity modulator with an InGaAsP bulk", published in 1995.
1995 IEICE Electronis Society, pp. 301, C-301. "10 Gb/s Transmission over 100 km of Standard Fiber with a Blue Chirp Modulator Integrated Laser", Mar. 1996.
K. Yamada et al., "Low-chirp, low-polarization dependent characteristics of electroabsorption optical intensity modulator with an inGaAsP bulk", 1995 IEICE General Meeting, C-349, pp. 349.
K. Morito et al., "10 Gb/s Transmission over 100 km of Standard Fiber with a Blue Chirp Modulator Integrated DFB Laser", 1995 IEICE Electronics Society, C-301, pp. 301 Mar. 1996.
H. Ooi et al., "10 Gb/s SMF transmission characteristics using modulator integrated DFB laser", 1996 IEICE General Meeting, B-1103, pp. 535.
F. Devaux et al., "Simple Measurement of Fiber Dispersion and of Chirp Parameter of Intensity Modulated Light Emitter", Journal of Lighwave Technology, vol. 11, No. 12, Dec. 1993, pp. 1937-1940.
J.A.J. Fells et al., "Transmission beyond the dispersion limit using a negative chirp electroabsorption modulator", Electronics Letters, vol. 30, No. 14, Jul. 7, 1994, pp. 1168-1169.

Affiliated with

Also associated with

Rating

Semiconductor electroabsorption optical modulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor electroabsorption optical modulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor electroabsorption optical modulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1515513