Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-11-25
1998-12-08
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257749, H01L 31112
Patent
active
058474102
ABSTRACT:
A display device comprising a pixel portion having a thin film transistor using silicon as a semiconductor layer and a pixel electrode connected to the thin film transistor, wherein: said pixel electrode having a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film disposed on the first transparent electrically conductive film; said first transparent electrically conductive film comprises an oxide layer of a first metal having an oxidation potential lower than that of silicon; and said second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon. Also claimed is a process for fabricating the display device.
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patent: 4940495 (1990-07-01), Weber et al.
patent: 5397920 (1995-03-01), Tran
patent: 5548425 (1996-08-01), Adachi et al.
patent: 5576556 (1996-11-01), Takemura et al.
Hardy David B.
Semiconductor Energy Laboratory Co.
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