Semiconductor electro-optical conversion

Details Semiconductor electro-optical conversion Semiconductor electro-optical conversion

1987-01-08

1989-08-22

Larkins, William D.

357 30, H01L 29267, H01L 3100

Patent

active

048600660

ABSTRACT:
An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap>1 electron volt in a layer between 20 and 200 Angstroms thick. A GaAs covered by GaAlAs converter with a 100 Angstrom Si layer over the GaAlAs is illustrated.

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