Semiconductor electrically programmable fuse element with...

Details Semiconductor electrically programmable fuse element with... Semiconductor electrically programmable fuse element with...

2004-05-24

2008-05-06

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S625000, C257S757000, C257S755000

Reexamination Certificate

active

07368801

ABSTRACT:
A fuse link is formed between first and second terminals. The first and second terminals and fuse link have a polysilicon layer and a layer formed on the polysilicon layer and containing a metal element. At least a portion of the fuse link is an amorphous silicon layer.

REFERENCES:
patent: 4835118 (1989-05-01), Jones et al.
patent: 6323535 (2001-11-01), Iyer et al.
patent: 6624499 (2003-09-01), Kothandaraman et al.
patent: 6798684 (2004-09-01), Low et al.
Stefan Holzer, et al., “Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures”, 9thTherminic Workshop, Sep. 24-26, 2003, pp. 263-268.
C. Kothandaraman, et al., “Electrically Programmable Fuse (eFUSE) Using Electromigration in Silicides”, IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002, pp. 523-525.
Mohsen Alavi, et al., “A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process”, IEDM DIGEST 1997, pp. 855-858.

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