Semiconductor electrically erasable and programmable read only m

Details Semiconductor electrically erasable and programmable read only m Semiconductor electrically erasable and programmable read only m

1999-05-11

2000-08-29

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518901, 36523001, 36523003, 3652385, G11C 1140

Patent

active

061117862

ABSTRACT:
An electrically erasable and programmable read only memory device changes all the memory cells of plural sectors to write-in state through repetition of a multi-write operation before a data erasing, and plural memory cells are concurrently changed to the write-in state through the multi-write-in operation, wherein memory cells for storing a byte of data are concurrently selected from each of the sectors, and electric current flows through the selected memory cell groups and associated source lines into plural switching transistors respectively connected to the source lines so that the plural switching transistors prevent the potential level on the source lines from undesirable floating-up.

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