Semiconductor electrical heater and method for making same

Electric resistance heating devices – Heating devices – Vaporizer

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21912163, 21912165, 21912185, 131194, B23K 2602, B23K 2600, A24F 4700

Patent

active

056596561

ABSTRACT:
A method is disclosed for mechanically and electrically bonding metallic materials and semiconductor materials. The method according to the invention may be used, for example, in forming a semiconductor electrical heater, particularly for use in electrical smoking articles. A metallic element, such as a copper alloy power supply tab, is laser welded to a semiconductor element, such as a doped silicon resistive heater element. A laser beam is directed through a hole in the copper alloy tab to melt some silicon material, which flows into the hole in the copper tab, reacts and intermixes with the copper and solidifies to form a slug containing copper silicide. A protective material such as nickel may be applied to protect the copper silicide from oxidation if desired. An ohmic, low resistance contact and high strength bond is provided between the parts.

REFERENCES:
patent: 3402460 (1968-09-01), Smith
patent: 4078167 (1978-03-01), Banas et al.
patent: 4261764 (1981-04-01), Narayan
patent: 4281236 (1981-07-01), Von Allmen
patent: 4321283 (1982-03-01), Patel et al.
patent: 4513298 (1985-04-01), Scheu
patent: 4947020 (1990-08-01), Imamura et al.
patent: 4947874 (1990-08-01), Brooks
patent: 5062146 (1991-10-01), Kagechika
patent: 5093894 (1992-03-01), Deevi et al.
patent: 5224498 (1993-07-01), Deevi et al.
patent: 5231050 (1993-07-01), Boudou et al.
patent: 5249586 (1993-10-01), Morgan et al.
patent: 5369723 (1994-11-01), Counts et al.
American Society for Metals, "Laser Beam Welding", Metals Handbook, Ninth Edition, 1983, vol. 6, pp. 647-671.
American Society for Metals, "Hardfacing --Laser Cladding", Metals Handbook, Ninth Edition, 1983, vol. 6, pp. 796-799.
Arthur B. Glaser and Gerald E. Subak-Sharpe, "Integrated Circuit Engineering, Design, Fabrication and Applications," Publisher Addison-Wesley Publishing Company, ISBN No. 020107427-3, 1977.
Duvall, et al., "TLP* Bonding: a New Method for Joining Heat Resistant Alloys," Welding Journal, Apr., 1974, pp. 203-214.
Nakagawa et al., "Modeling of Base Metal Dissolution Behavior during Transient Liquid-Phase Brazing," Metallurgical Transactions A, Feb., 1991, vol. 22A, pp. 543-555.
Gale et al., "Microstructural Development in Transient Liquid-Phase Bonding," Metallurgical Transactions A, Oct., 1991, vol. 22A, pp. 2451-2457.
Hoppin et al., "Activated Diffusion Bonding," Welding Research Supplement, Nov., 1970, pp. 505-s through 509-s.
Popov et al., "Research Into The Structure Of The Transition Zone In Welding Joints Between Silicon Monocrystals And Tungsten," Avt. Svarka, 1974, No. 9, pp. 17-19.
Mura'ev et al., "Effects of the Moisture Content Of The Shielding Atmosphere In Chambers On The Hydrogen Contents Of Welded Joints In Titanium Alloys," Avt. Svarka, 1974, No. 9, pp. 20-22.
Rudzit et al., "Selection of A Non-Discrete Logic Model Of The Process Of The Thermocompression Welding Of Aluminum To Silicon," Avt. Svarka, 1975, No. 6, pp. 9-13.
Mechev et al., "The Axial Distribution Of Temperarure Of An Electric ARC Burning In Argon," Avt. Svarka, 1975, No. 6, pp. 14-17.
Romanovskii et al., "On The Possibilities Of Increasing The Rate Of Formation Of Physical Contact Over A Large Area In The Solid-Phase Bonding Of Silicon To Aluminum," Svar. Proiz, 1978, No. 7, pp. 4-5.
Romanovskii et al., "The Mechanical Properties Of Joints Between Single-Crystal Silicon And Aluminum Produced By Diffusion Bonding in Hydrogen," Svar. Proiz., 1979, No. 5, pp. 31-32.
MacDonald, et al., "Transient Liquid Phase Bonding Processes," TMS Symposium The Metal Science of Joining, Cincinnati, 1991.
Mayer, "Gold Contacts to Semiconductor Devices," Gold Bull., 1984, 17, (1), pp. 18-26
IBM Technical Disclosure Bulletin, vol. 31, No. 6, Nov. 1988, Armonk, NY, USA.

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