Semiconductor dynamic sensor having variable capacitor...

Details Semiconductor dynamic sensor having variable capacitor... Semiconductor dynamic sensor having variable capacitor...

2006-06-13

2006-06-13

Kwok, Helen (Department: 2856)

Measuring and testing

Speed, velocity, or acceleration

Acceleration determination utilizing inertial element

C361S280000, C073S504120

Reexamination Certificate

active

07059190

ABSTRACT:
An acceleration sensor is formed on a top surface of a laminated silicon-on-insulator substrate. The acceleration sensor is composed of first and second capacitors each including a movable electrode that moves according to acceleration imposed thereon. The first and the second capacitors are so made that their capacitances change differently when the same acceleration is imposed and that the capacitance difference represents an amount of acceleration imposed thereon. A third capacitor having an output electrode solidly connected to the base substrate via the insulation layer is also formed on the same silicon-on-insulator substrate. An output representing amount of acceleration is taken out from the output electrode of the third capacitor.

REFERENCES:
patent: 5146389 (1992-09-01), Ristic et al.
patent: 6308569 (2001-10-01), Stewart
patent: 6955086 (2005-10-01), Yoshikawa et al.
patent: A-9-113534 (1997-05-01), None

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