Semiconductor dynamic sensor and method of manufacturing the...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S049000, C438S050000, C438S051000, C438S052000, C438S053000, C438S106000, C438S108000, C438S109000, C257S414000, C257S417000, C257SE21500, C257SE21513

Reexamination Certificate

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07572659

ABSTRACT:
A semiconductor sensor includes an adhesive film for suppressing thermal stress transfer to a semiconductor sensor chip. More specifically, the adhesive film includes a first layer and a second layer. An elasticity modulus of the first layer is lower than that of the second layer, and the second layer has a water absorption smaller than that of the first layer. One surface of a semiconductor wafer is in contact with the first layer. Once the semiconductor wafer and the adhesive film are diced into a plurality of sensor chips, the sensor chip with the adhesive film is mounted on a sensor package via the second layer interposed therebetween.

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patent: 2001/0055836 (2001-12-01), Kunda
Office Action dated Jul. 1, 2008 in corresponding DE application No. 102006058325.6 (and English Translation).

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