Semiconductor dynamic memory cell array with word lines extendin

Details Semiconductor dynamic memory cell array with word lines extendin Semiconductor dynamic memory cell array with word lines extendin

1982-07-16

1984-08-07

Fears, Terrell W.

Static information storage and retrieval

Format or disposition of elements

365149, G11C 1124

Patent

active

044647344

ABSTRACT:
A dynamic read/write memory cell of the one transistor type is made by a single-level polysilicon process in which the word lines and the gates of the access transistors are formed by the metal strips. No metal-to-silicon or metal-to-polysilicon contacts are needed. The access transistors are made by etching through polysilicon strips which are the capacitor bias plates. The size of the transistor is not determined by alignment accuracy.

REFERENCES:
patent: 4193125 (1980-03-01), Moriya

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