Semiconductor driver for producing switching and offset signals

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307443, 307448, 307311, 307362, 307559, 307561, H03K 301, H03K 342

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active

050158732

ABSTRACT:
A semiconductor integrated device for applying a switching signal and an offset signal in superposed relation to each other to an external load connectable between an output terminal and a power supply terminal, comprises an offset signal supplying circuit for supplying an offset signal to the output terminal and including a first field effect transistor having a drain electrode connected to the output terminal, and a second field effect transistor having substantially the same characteristics as the first field effect transistor. The second field effect transistor has a drain electrode connected to a source electrode of the first field effect transistor, a gate electrode connected to a control terminal receptive of a control signal effective to control the offset signal, and a source electrode connected to a negative power supply terminal. A constant-voltage generating circuit is provided in the circuit device for generating and applying a constant voltage to a gate electrode of the first field effect transistor. The constant-voltage generating circuit includes a resistor connected between a positive power supply terminal and the gate electrode of the first field effect transistor, and a plurality of series-connected diodes having the substantially same characteristics. A voltage between the series connected diodes is set to half of a power supply voltage applied between the positive and negative power supply terminals. Each of the diodes has an internal resistance smaller than a specific resistance of the resistor.

REFERENCES:
patent: 4622477 (1986-11-01), Uda
patent: 4634893 (1987-01-01), Craycraft et al.
patent: 4661725 (1987-04-01), Chantepie
patent: 4792706 (1988-12-01), Ovens et al.
patent: 4807239 (1989-02-01), Tankano et al.

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