Semiconductor double heterostructure laser device with InP curre

Coherent light generators – Particular active media – Semiconductor

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372 43, 372 44, 372 45, 372 50, 372 96, 257 12, 257 14, 257183, H01S 319

Patent

active

053196619

ABSTRACT:
A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.

REFERENCES:
patent: 4416011 (1983-11-01), Olsen
patent: 4426700 (1984-01-01), Hirao et al.
patent: 4480331 (1984-10-01), Thompson
patent: 4484332 (1984-11-01), Hawrylo
patent: 4496403 (1985-01-01), Turley
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4870468 (1989-09-01), Kinoshita et al.
patent: 4888624 (1989-12-01), Johnston, Jr. et al.
patent: 5111471 (1992-05-01), Hattori
patent: 5138625 (1992-08-01), Paoli et al.
patent: 5214662 (1993-05-01), Irikawa et al.

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