Semiconductor double heterostructure laser device and method of

Details Semiconductor double heterostructure laser device and method of Semiconductor double heterostructure laser device and method of

1975-06-06

1976-09-28

La Roche, Eugene

Oscillators

Molecular or particle resonant type

29576E, 148175, 156 17, 357 18, H01L 21208, H01S 319

Patent

active

039835103

ABSTRACT:
A strip-geometry semiconductor double-heterostructure laser device includes an n-GaAs substrate on which a first layer of n-Al.sub.x Ga.sub.1-x As and a second layer of p-AlyGa.sub.1-y As are formed by epitaxial growth techniques. A third layer of heat- and Ga melt resistant material of narrow stripe geometry is formed on the second layer. After the second layer and part of the first layer, except for their stripe portions, are meltbacked by Ga melt liquid, a fourth layer of n-Al.sub.z Ga.sub.1-z As is formed by epitaxial growth techniques of the same Ga melt liquid in one process.

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.

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