Semiconductor double-channel-planar-buried-heterostructure laser

Details Semiconductor double-channel-planar-buried-heterostructure laser Semiconductor double-channel-planar-buried-heterostructure laser

1994-03-24

1995-03-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054003555

ABSTRACT:
A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures provided on both sides of a multiple quantum well structure for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer of each double channel structure ranging between 3.times.10.sup.17 cm.sup.-3 and 1.times.10.sup.18 cm.sup.-3 and equal to or less than a carrier density of a cladding layer on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.

REFERENCES:
patent: 4805178 (1989-02-01), Wilt
patent: 4833684 (1989-05-01), Krekels et al.
patent: 4866723 (1989-09-01), Van Dongen
patent: 4870650 (1989-09-01), Mink
patent: 4910744 (1990-03-01), Yoshida et al.
"InGaAsP Double-Channel-Planar-Buried-heterostructure Laser Diode (DC-PBH LD) with current effective confinement", Journal of Lightwave Technology, vol. LT-1, No. 1, Mar. 1983 pp. 195-202.
"High-temperature operation of 1.55 .mu.m InGaAsp Double-Channel Buried-Heterostructure Lasers Grown by LPE" by Electronics Letter 10th May 1984, vol. 20, No. 10 pp. 417-419.
"Modified double-channel planar-buried heterostructure laser with improved high-temperature stability" by J. Appl. Phys. 62 (1), 1 Jul. 1987, pp. 297-299.

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