Semiconductor dopant vaporizer

Radiant energy – Ion generation – With sample vaporizing means

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H01J 2700

Patent

active

048453668

ABSTRACT:
The present invention involves apparatus and methods for introducing ion source material into an ion implant system for use in connection with Freeman type sources. A vaporizer unit which is removable from the system is prepared for insertion into the ion implant equipment outside the system. It is cleaned, a new vial of ion source material is introduced and it may be pre-heated to degas it or to prepare it for use in the system. The vaporizer unit which is currently in use is removed, to be cleaned and recharged, and the previously prepared vaporizer unit is inserted, sealed in place and the vacuum established. The ion implant system is, then, ready to resume operation with minimal down time. The vaporizer unit comprises a vaporizer block of high heat conductive material such as copper which includes three cavities or wells. One cavity contains a heater, one a gas flow path for heating and/or cooling, and one contains a sealed vial of semiconductor dopant. Wells for temperature sensors are also provided, as are means for breaking or puncturing the vial once the ion implant system is ready for operation. The evaporator block is mounted, when in use, in the vacuum chamber of the ion implant device, and is connected through gas-tight seals with a face plate which forms a seal closing the vacuum chamber and supporting the vaporizer block. An external operator is provided for transmitting movement into the system for breaking the vial at the desired time.

REFERENCES:
patent: 2824967 (1958-02-01), Kamen
patent: 3888107 (1975-06-01), Langer et al.

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