Semiconductor distributed feedback laser diode

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 46, 372102, H01S 318

Patent

active

056195230

ABSTRACT:
A distributed-feed back semiconductor laser diode comprises a substrate of n-type conductivity GaAs having a pair of opposed surfaces, a pair of sides and a pair of ends. In sequence on one of the opposed surfaces are a first clad layer of n-type conductivity graded AlGaAs; a first confining layer of undoped AlGaAs; a first quantum well layer of undoped GaAs; a barrier layer of undoped AlGaAs; a second quantum well layer of undoped GaAs; a second confining layer of undoped AlGaAs; a spacer layer of p-type conductivity graded AlGaAs; a plurality of spaced, parallel grating bars of p-type conductivity AlGaAs extending across the spacer layer parallel to the ends of the substrate; a second clad layer of p-type conductivity graded AlGaAs over and between the grating bars; and contact layer of p+ type conductivity GaAs. A first conductive contact layer contacts the contact layer and a second conductive contact layer is on the other opposed surface of the substrate. The dual quantum well layers of undoped GaAs provide a laser diode which emits visible radiation at a wavelength less than 880 nm.

REFERENCES:
patent: 5170405 (1992-12-01), Connolly et al.
patent: 5295150 (1994-03-01), Vangieson et al.
A. Takemoto et al., "1.3-um Distributed Feedback Laser Diode with a Grating Accurately Controlled by a New Fabrication Technique", Journal of Lightwave Technology, vol. 1, No.1 12, Dec., 1989, pp. 2072-2076.
P. York et al., "MOCVD Regrowth over GaAS/AlGaAs Grating for High Power Long-Lived InGaAs/AlGaAs Lasers", Sixth International Conference on Metalorganic Vapor Phase Epitaxy, Cambridge, MA, 1992 (no month available) .

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