Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1992-11-18
1994-11-08
Lee, John D.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 46, H01S 319
Patent
active
053633997
ABSTRACT:
A gain coupled distributed feedback semiconductor laser device includes regions with a predetermined period in an active layer or a cladding layer on the active layer in such a manner that a perturbation in the distribution of charge carriers injected into the active layer is produced which results in a perturbation in gain coefficient without increasing internal loss. The structure produces single-longitudinal-mode oscillation.
REFERENCES:
patent: 4622673 (1986-11-01), Tsang
patent: 4716570 (1987-12-01), Yoshida et al.
patent: 4722092 (1988-01-01), Liau et al.
patent: 4796274 (1989-01-01), Akiba et al.
patent: 5020072 (1991-05-01), Abe et al.
patent: 5077752 (1991-12-01), Tada et al.
patent: 5170405 (1992-12-01), Connolly et al.
Luo et al., "Fabrication and Characteristics of a Gain-Coupled Distributed-Feedback Laser Diode"; Solid State Devices and Materials, Tokyo, 1988, pp. 327-330, Aug. 1988.
Itaya et al., "New 1.5 .mu.m Wavelength GaInAsP/InP Distributed Feedback Laser", Electronics Letters, vol. 18, No. 23, Nov. 1982.
Luo et al., GaAlAs/GaAs Quantum Well Gain-Coupled Distributed Feedback Lasers, Extended Abstract of the International Conference on Solid State Devices and Materials, Yokohama, 1991 (Aug.), pp. 733-734.
Lee John D.
Mitsubishi Denki & Kabushiki Kaisha
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