Semiconductor display device with a hydrogen supply and hydrogen

Details Semiconductor display device with a hydrogen supply and hydrogen Semiconductor display device with a hydrogen supply and hydrogen

1996-09-16

1998-05-05

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 59, 249110, 249111, H01L 2904, H01L 31036

Patent

active

057478309

ABSTRACT:
The invention provides a semiconductor device having a low threshold voltage and capable of operating at a high speed, and also provides an active matrix display device including such a semiconductor device. The invention also provides a method of producing such a semiconductor device and an active matrix display device. In the invention, a hydrogen supply layer is disposed above semiconductor layers in such a manner that the hydrogen supply layer is apart from the semiconductor layers. A hydrogen diffusion barrier layer for preventing hydrogen from diffusing outward from the hydrogen supply layer is disposed on the hydrogen supply layer in such a manner that the hydrogen diffusion barrier layer is in direct contact with the hydrogen supply layer. The hydrogen diffusion barrier layer is preferably made of a high melting point metal or a compound thereof. The hydrogen supply layer is preferably formed by depositing SiN or amorphous silicon by means of plasma CVD.

REFERENCES:
patent: 4759610 (1988-07-01), Yanagisawa
patent: 5499123 (1996-03-01), Mikoshiba

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