Semiconductor device manufacturing: process – Having biomaterial component or integrated with living organism
Reexamination Certificate
2005-06-06
2009-11-10
Lee, Eugene (Department: 2891)
Semiconductor device manufacturing: process
Having biomaterial component or integrated with living organism
C257SE21413, C438S149000, C438S151000, C438S164000, C438S166000
Reexamination Certificate
active
07615384
ABSTRACT:
A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and increase in off current due to the grain boundaries, and a semiconductor device manufactured by using the manufacturing method is also provided. Stripe shape or rectangular shape unevenness is formed only in a driver circuit. Continuous wave laser light is irradiated to a semiconductor film formed on an insulating film along the stripe unevenness of the insulating film or along a major axis or minor axis of the rectangular unevenness. Although it is most preferable to use the continuous wave laser light at this point, pulse wave laser light may also be used.
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Gumedzoe Peniel M
Lee Eugene
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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