Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-05-20
2008-05-20
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S068000, C257S277000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C257S311000, C257S312000, C257S313000, C257S532000, C257S535000, C257S906000, C257S908000
Reexamination Certificate
active
07375376
ABSTRACT:
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
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Fujikawa Saishi
Hayakawa Masahiko
Hirosue Takashi
Kato Kiyoshi
Murakami Satoshi
Costelli Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Soward Ida M.
LandOfFree
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