Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Reexamination Certificate
2007-05-15
2007-05-15
Nguyen, Dung T. (Department: 2871)
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
C349S138000
Reexamination Certificate
active
09809646
ABSTRACT:
A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.
REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 5079606 (1992-01-01), Yamamura et al.
patent: 5177571 (1993-01-01), Satoh et al.
patent: 5182620 (1993-01-01), Shimada et al.
patent: 5272100 (1993-12-01), Satoh et al.
patent: 5585951 (1996-12-01), Noda et al.
patent: 5605847 (1997-02-01), Zhang
patent: 5637894 (1997-06-01), Hori et al.
patent: 5643801 (1997-07-01), Ishihara et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5717224 (1998-02-01), Zhang
patent: 5731216 (1998-03-01), Holmberg et al.
patent: 5750430 (1998-05-01), Son
patent: 5767530 (1998-06-01), Ha
patent: 5767531 (1998-06-01), Yoshinouchi
patent: 5818552 (1998-10-01), Sato
patent: 5828103 (1998-10-01), Hsu
patent: 5853960 (1998-12-01), Tran et al.
patent: 5886364 (1999-03-01), Zhang
patent: 5889302 (1999-03-01), Liu
patent: 5891764 (1999-04-01), Ishihara et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5966193 (1999-10-01), Zhang et al.
patent: 5982471 (1999-11-01), Hirakata et al.
patent: 5986305 (1999-11-01), Wu
patent: 5990491 (1999-11-01), Zhang
patent: 6013928 (2000-01-01), Yamazaki et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6067131 (2000-05-01), Sato
patent: 6088070 (2000-07-01), Ohtani et al.
patent: 6100954 (2000-08-01), Kim et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6225150 (2001-05-01), Lee et al.
patent: 6243155 (2001-06-01), Zhang et al.
patent: 6252248 (2001-06-01), Sano et al.
patent: 6259138 (2001-07-01), Ohtani et al.
patent: 6259200 (2001-07-01), Morita et al.
patent: 6294815 (2001-09-01), Yamazaki et al.
patent: 6326249 (2001-12-01), Yamazaki et al.
patent: 6327006 (2001-12-01), Sato et al.
patent: 6331473 (2001-12-01), Hirabayashi
patent: 6335290 (2002-01-01), Ishida
patent: 6335540 (2002-01-01), Zhang
patent: 6340830 (2002-01-01), Takemura
patent: 6365917 (2002-04-01), Yamazaki
patent: 6369410 (2002-04-01), Yamazaki et al.
patent: 6380561 (2002-04-01), Ohtani et al.
patent: 6392255 (2002-05-01), Shibata et al.
patent: 6396105 (2002-05-01), Yamazaki et al.
patent: 6403406 (2002-06-01), Lee et al.
patent: 6462802 (2002-10-01), Nishimura et al.
patent: 6462806 (2002-10-01), Zhang et al.
patent: 6501097 (2002-12-01), Zhang
patent: 6555420 (2003-04-01), Yamazaki
patent: 6567136 (2003-05-01), Sakuramoto et al.
patent: 6573589 (2003-06-01), Zhang
patent: 6576926 (2003-06-01), Yamazaki et al.
patent: 6583472 (2003-06-01), Shibata et al.
patent: 6624012 (2003-09-01), Shibata et al.
patent: 6630722 (2003-10-01), Aoki
patent: 6638800 (2003-10-01), Ishihara et al.
patent: 6642544 (2003-11-01), Hamada et al.
patent: 6740938 (2004-05-01), Tsunoda et al.
patent: 6759678 (2004-07-01), Yamazaki et al.
patent: 6949767 (2005-09-01), Yamazaki
patent: 6998299 (2006-02-01), Shibata et al.
patent: 7038294 (2006-05-01), Ma et al.
patent: 2001/0008781 (2001-07-01), Lee et al.
patent: 2002/0000551 (2002-01-01), Yamazaki et al.
patent: 2002/0005905 (2002-01-01), Yamazaki et al.
patent: 2002/0063261 (2002-05-01), Zhang
patent: 2002/0132399 (2002-09-01), Shibata
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 2002/0142512 (2002-10-01), Ma
patent: 2003/0116766 (2003-06-01), Zhang
patent: 2004/0058483 (2004-03-01), Shibata
patent: 2004/0126945 (2004-07-01), Shibata
patent: 2004/0206974 (2004-10-01), Yamazaki et al.
patent: 2005/0167674 (2005-08-01), Shibata
patent: 1241025 (2000-01-01), None
patent: 1258103 (2000-06-01), None
patent: 0 450 941 (1991-10-01), None
patent: 0 762 180 (1997-03-01), None
patent: 0 997 769 (2000-05-01), None
patent: 1 001 467 (2000-05-01), None
patent: 1 001 467 (2000-05-01), None
patent: 1 003 223 (2000-05-01), None
patent: 1 005 093 (2000-05-01), None
patent: 1 031 873 (2000-08-01), None
patent: 1 041 641 (2000-10-01), None
patent: 1 081 676 (2001-03-01), None
patent: 1 087 438 (2001-03-01), None
patent: 59-121876 (1984-07-01), None
patent: 05-243262 (1993-09-01), None
patent: 6-148685 (1994-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 7-235680 (1995-09-01), None
patent: 08-78329 (1996-03-01), None
patent: 8-274336 (1996-10-01), None
patent: 09-043639 (1997-02-01), None
patent: 10-031235 (1998-02-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-189999 (1998-07-01), None
patent: 10 23351 (1998-09-01), None
patent: 10-233511 (1998-09-01), None
patent: 11-087726 (1999-03-01), None
patent: 11-261075 (1999-09-01), None
patent: 11-274502 (1999-10-01), None
patent: 2000-010120 (2000-01-01), None
patent: 2000-131716 (2000-05-01), None
patent: 2001-210832 (2001-08-01), None
Hatano et al.; “A Novel Self-aligned Gate-overlapped LDD Poly-Si TFT with High Reliability and Performance”;IEDM Technical Digest 97; pp. 523-526; 1997.
M. Baldo et al., Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999; pp. 4-6.
T. Tsutsui et al., JPN. J. Appl. Physics, vol. 38, Dec. 15, 1999, pp. L1502-L1504.
M. Baldo et al., Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
T. Tsutsui et al., “Photochemical Processes in Organized Molecular Systems”, Jan. 1, 1991, pp. 437-450.
Australian Search Report dated Sep. 24, 2004 issued in Singapore Application No. SG 200101320-0, (5 pages).
Yoo , “Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor,” 1997, pp. 219-222, School of Electrical Engineering, Seoul National University, Seoul, Korea, Samsung Electronics Co., Ltd. KOREA.
Hirai , “A high-Aperture-Ratio a-Si TFT Liquid Crystal Light Valve for Workstations,” Apr. 1994, pp. 165-170, 298 NEC Research & Development 35, No. 2, Tokyo, JAPAN.
Kumar , “Kink-Free Polycrystalline Silicon Double-Gate Elevated-Channel Thin-Film Transistors,” Dec. 1998, pp. 2514-2520, IEEE transactions on Electron Devices; vol. 45, No. 1.
Arao Tatsuya
Koyama Jun
Ono Koji
Suzawa Hideomi
Yamazaki Shunpei
Duong Thoi V.
Nguyen Dung T.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor display device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor display device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor display device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3819515