Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-06-14
2005-06-14
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S443000, C257S466000, C349S042000, C349S043000, C349S138000
Reexamination Certificate
active
06906343
ABSTRACT:
A method of manufacturing a semiconductor device with the use of a laser crystallization method is provided which can prevent grain boundaries from being formed in a channel forming region of a TFT and which can avoid substantial reduction in TFT mobility, reduction in on current, and increase in off current due to the grain boundaries, and a semiconductor device manufactured by using the manufacturing method is also provided. Stripe shape or rectangular shape unevenness is formed only in a driver circuit. Continuous wave laser light is irradiated to a semiconductor film formed on an insulating film along the stripe unevenness of the insulating film or along a major axis or minor axis of the rectangular unevenness. Although it is most preferable to use the continuous wave laser light at this point, pulse wave laser light may also be used.
REFERENCES:
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5828082 (1998-10-01), Wu
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 6204520 (2001-03-01), Ha et al.
patent: 6300175 (2001-10-01), Moon
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6512246 (2003-01-01), Tanabe
patent: 06-349735 (1994-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-078329 (1996-03-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
Geis et al., “Crystalline Silicon on Insulators by Graphoepitaxy,” IEEE 1979, pp. 210-212.
Geis et al., “Grapho-epitaxy of Silicon on Fused Silica Using Surface Micropatterns and Laser Crystallization,” J. Vac. Sci. Tech., 16(6), Nov./Dec. 1979, pp. 1640-1643.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Thomas Tom
Warren Matthew E.
LandOfFree
Semiconductor display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3469454