Semiconductor diodes having low forward conduction voltage drop

Details Semiconductor diodes having low forward conduction voltage drop Semiconductor diodes having low forward conduction voltage drop

1997-01-23

1998-10-20

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257393, H01L 2906, H01L 310352, H01L 2976, H01L 2994

Patent

active

058250794

ABSTRACT:
Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.

REFERENCES:
patent: 3407343 (1968-10-01), Fang
patent: 3458798 (1969-07-01), Fang et al.
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 3749987 (1973-07-01), Anantha
patent: 3935586 (1976-01-01), Landheer et al.
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4139880 (1979-02-01), Ulmer et al.
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4246502 (1981-01-01), Kabinel
patent: 4423456 (1983-12-01), Zaidenweber
patent: 4533988 (1985-08-01), Daly et al.
patent: 4680601 (1987-07-01), Mitlehner et al.
patent: 4745395 (1988-05-01), Robinson
patent: 4777580 (1988-10-01), Bingham
patent: 4811065 (1989-03-01), Cogan
patent: 4857985 (1989-08-01), Miller
patent: 4875151 (1989-10-01), Ellsworth et al.
patent: 4903189 (1990-02-01), Ngo et al.
patent: 5038266 (1991-08-01), Callen et al.
patent: 5101254 (1992-03-01), Hamana
patent: 5109256 (1992-04-01), De Long
patent: 5132749 (1992-07-01), Nishibayashi et al.
patent: 5144547 (1992-09-01), Masamoto
patent: 5184198 (1993-02-01), Bartur
patent: 5258640 (1993-11-01), Hsieh et al.
patent: 5268833 (1993-12-01), Axer
patent: 5296406 (1994-03-01), Readdie et al.
patent: 5349230 (1994-09-01), Shigekane
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 5430323 (1995-07-01), Yamazaki et al.
patent: 5469103 (1995-11-01), Shigekane
patent: 5510641 (1996-04-01), Yee et al.
U.S. Statutory Invention Registration No. H64, H. Maleis, May 1986.

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