Semiconductor diode with voltage-dependent capacitance

Details Semiconductor diode with voltage-dependent capacitance Semiconductor diode with voltage-dependent capacitance

1974-02-22

1976-01-27

James, Andrew J.

357 15, 357 55, 357 68, H01L 2992

Patent

active

039355853

ABSTRACT:
A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.

REFERENCES:
patent: 2989650 (1961-06-01), Doucette et al.
patent: 3093755 (1963-06-01), Haberecht et al.
patent: 3176151 (1965-03-01), Atalla et al.
patent: 3233196 (1966-02-01), Osafune et al.
patent: 3307088 (1967-02-01), Fujikawa
patent: 3532945 (1970-10-01), Weckler
patent: 3544395 (1970-12-01), Terasaki
patent: 3764415 (1973-10-01), Raabe et al.

Affiliated with

Also associated with

Rating

Semiconductor diode with voltage-dependent capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diode with voltage-dependent capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode with voltage-dependent capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1814689