Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1994-08-24
1997-03-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257483, 257484, 257605, 257606, H01L 27095, H01L 2947, H01L 29812, H01L 3107
Patent
active
056082444
ABSTRACT:
A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N.sup.- body (2). A P.sup.- layer (4a) is disposed in the top portion of the N.sup.- body (2) so as to be spacewise complementary to the anode P layers (3). In the N.sup.- body (2), P regions (5) are selectively formed below the P.sup.- layer (4a). On the N.sup.- body (2), an anode electrode (6) is disposed in contact with both the P.sup.- layer (4a) and the anode P layers (3). A cathode electrode (7) is disposed under the N.sup.- body (2) through a cathode layer (1). When the diode is reverse-biased, a depletion layer does not have a sharply curved configuration due to the P regions (5). Hence, concentration of electric field is avoided and a breakdown voltage would not deteriorate. During forward-bias state of the diode, injection of excessive holes from the anode P layers (3) into the N.sup.- body (2) is prevented, thereby reducing a recovery current.
REFERENCES:
patent: 3381187 (1968-04-01), Zuleeg
patent: 4089020 (1978-05-01), Ikeda et al.
patent: 5389815 (1995-02-01), Takahashi
Patent Abstracts of Japan, vol. 8, No. 190 (E-263), Aug. 31, 1984, JP-A-59 079 574, May 8, 1984.
Patent Abstracts of Japan, vol. 8, No. 272 (E-284)(1709), Dec. 13, 1984, JP-A-59 143370, Aug. 16, 1984.
Patent Abstracts of Japan, vol. 1, No. 90 (E-037), Aug. 22, 1977, JP-A-52 024 465, Feb. 23, 1977.
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, Apr. 1991, "Optimization of the MPS Rectifier Via Variation of Schottky Region Area", S. H. Larry Tu, et al., pp. 109-112.
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, Apr. 1991, "A Novel Soft and Fast Recovery Diode (SFD) With Thin P-Layer Formed by Al-Si Electrode", Mutsuhiro Mori, et al., pp. 113-117.
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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