Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode – With means to limit area of breakdown
Patent
1993-04-20
1995-02-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
With means to limit area of breakdown
257475, 257481, 257483, 257493, 257496, H01L 2990
Patent
active
053898150
ABSTRACT:
A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N.sup.- body (2). A P.sup.- layer (4a) is disposed in the top portion of the N.sup.- body (2) so as to be spacewise complementary to the anode P layers (3). In the N.sup.- body (2), P regions (5) are selectively formed below the P.sup.- layer (4a). On the N.sup.- body (2), an anode electrode (6) is disposed in contact with both the P.sup.- layer (4a) and the anode P layers (3). A cathode electrode (7) is disposed under the N.sup.- body (2) through a cathode layer (1). When the diode is reverse-biased, a depletion layer does not have a sharply curved configuration due to the P regions (5). Hence, concentration of electric field is avoided and a breakdown voltage would not deteriorate. During forward-bias state of the diode, injection of excessive holes from the anode P layers (3) into the N.sup.- body (2) is prevented, thereby reducing a recovery current.
REFERENCES:
patent: 4089020 (1978-05-01), Ikeda et al.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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