Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Patent
1996-06-14
1999-04-27
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
257472, 257476, H01L 27095
Patent
active
058982108
ABSTRACT:
A Schottky diode having a series of stacked layers starting with a conventional substrate having a semi-insulating GaAs layer and an un-doped GaAs buffer layer. An n-type Si--GaAs channel layer is grown on the GaAs buffer layer. A low-temperature-grown GaAs barrier layer covers the center portion of the upper surface of the n-type channel layer. The Schottky diode comprises two terminals. One diode terminal comprises a ohmic contact deposited on the upper surface of the channel layer. This ohmic contact, which is ring-shaped, encircles the barrier layer. The other diode terminal includes a metal layer that forms a Schottky contact with the upper surface of the barrier layer. The Ga-to-As ratio in the low-temperature-grown GaAs barrier layer is adjusted so that the barrier layer contains a sufficient number of free electrons to support current flow for bias voltages above the Schottky barrier height. Under reverse bias, the barrier layer acts as an insulator, preventing diode breakdown at relatively high reverse bias voltages.
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Han Weiyu
Newman Peter G.
Crane Sara
O'Meara John M.
The United States of America as represented by the Secretary of
Zelenka Michael
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