Semiconductor diode structure

Details Semiconductor diode structure Semiconductor diode structure

1993-11-09

1994-12-06

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

257479, 257482, 257485, 257741, 257766, 257770, H01L 2948

Patent

active

053714008

ABSTRACT:
Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high Schottky barrier. The forward direction rising voltage is reduced on account of the first metal. The inverse direction yield voltage, which is decreased due to the lowered forward rising voltage, is compensated for upon linking of depletion regions generated by forming the PN junction under the first metal layer and not under the second metal layer. As a result, a high inverse yield voltage is realized.

REFERENCES:
patent: 4646115 (1987-02-01), Shannon et al.

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