1974-03-25
1976-04-06
Miller, Jr., Stanley D.
357 46, 357 49, 357 50, 357 55, 357 68, H01L 2710, H01L 2702, H01L 2906, H01L 2348
Patent
active
039494136
ABSTRACT:
A semiconductor diode matrix with only slight difference in the characteristics, and good reproducibility of the diodes, and small resistance of the matrix lines, in which the diodes are formed on strips of semiconductor material, located in the body of the dielectric base layer. Each strip is surrounded from the side of the base layer by a layer of material having higher conductivity than the semiconductor material of the strip.
REFERENCES:
patent: 3382115 (1968-05-01), Carter
patent: 3508980 (1970-04-01), Jackson et al.
patent: 3509433 (1970-04-01), Schroeder
Garyainov Stanislav Alexandrovich
Khrenov Evgeny Nikolaevich
Rzhanov Veniamin Gavrilovich
Shergold Evdokia Kirillovna
Miller, Jr. Stanley D.
Wojciechowicz E.
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