Semiconductor diode lasers

Details Semiconductor diode lasers Semiconductor diode lasers

1984-10-01

1987-05-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 47, H01S 319

Patent

active

046637613

ABSTRACT:
A semiconductor diode laser of the kind in which laser radiation occurs in an active region in a layer (3) of semiconductor material wherein optical confinement of the radiation to a portion (19) of said layer so as to direct light from said region to a light waveguide is obtained by virtue of differences in the refractive index of different parts of said layer arising from mechanical stresses in said layer, produced, for example, by differential thermal contraction during fabrication of the laser of different parts (96, 11b and 13, 15 or 21 and 5 or 23 and 3) of the laser structure.

REFERENCES:
patent: 4183038 (1980-01-01), Namizaki et al.
patent: 4212020 (1980-07-01), Yariv et al.
patent: 4334311 (1982-06-01), Oomura et al.
Y. C. Chen et al, "Thermalwaveguiding in Oxide-Defined, Narrow-Stripe, Large-Optical-Cavity Lasers", App. Phys. Lett., vol. 41, No. 2, Jul. 1982, pp. 129-131.
T. P. Lee et al, "Low Threshold Current Transverse Junction Lasers on Semi-Insulating Substrates by M.B.E.", Electronic Letters, vol. 16, No. 13, 19 Jun. 1980, pp. 510-511.

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