Coherent light generators – Particular active media – Semiconductor
Patent
1991-02-06
1992-12-08
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 96, H01S 319
Patent
active
051704056
ABSTRACT:
A distributed feed back semiconductor diode laser comprising a substrate of n-type conductivity gallium arsenide having a channel along one surface thereof between its end surfaces. A first clad layer of n-type gallium aluminum arsenide is on the surface of the substrate. The first clad layer fills the channel and has a planar surface. A thin active layer of undoped aluminum gallium arsenide is on the first clad layer and a spacer layer of p-type conductivity aluminum gallium arsenide is on the active layer. A grating layer of p-type conductivity aluminum gallium arsenide is on the spacer layer and has a second order grating therein which extends across the channel in the substrate. A second clad layer of p-type conductivity aluminum gallium arsenide is on the grating layer and a cap layer of n-type conductivity gallium arsenide is on the second clad layer. A p-type conductivity contact region extends through the cap layer to the second contact layer and is over the channel in the substrate. Conductive contacts are on the contact region and a second surface of the substrate. The composition and thicknesses of the active layer, spacer layer and grating layer are such as to provide the output beam of the diode laser with a relatively low divergence angle of about 27.degree..
REFERENCES:
patent: 4257011 (1981-03-01), Nakamura et al.
patent: 5027368 (1991-06-01), Kudo et al.
"1.3-um Distributed Feedback Laser Diode with a Gratting Accurately Controlled by a New fabrication Technique", published in Journal of Lightwave Technology, vol. 7, No. 12, Dec., 1989, pp. 2072-2076, by A. Takemoto et al.
B. Goldstein et al., "Efficient AlGaAs channeled-planar distributed feedback laser", published in Applied Physics Letters, vol. 53(7), Aug. 15, 1988, pp. 550-552.
N. Yoshida et al., "InGaAsP/InP DFB Laser with a new Grating Structure by MOCVD", published in Proceedings of International Electron Devices Meeting of Dec., 1988, pp. 307-310.
S. Takigawa et al., "Continuous room-temperature operation of a 759-nm GaAlAs distributed feedback laser", published in Applied Physics letters, vol. 51(20), Nov. 16, 1987, pp. 1580-1581.
Connolly John C.
Palfrey Stephen L.
Davie James W.
Dudley Mark Z.
Eastman Kodak Company
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