Semiconductor diode laser array

Details Semiconductor diode laser array Semiconductor diode laser array

1980-04-22

1982-03-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

350 9611, 357 17, 357 90, H01S 319

Patent

active

043180582

ABSTRACT:
An integrated laser array is disclosed in which a plurality of semiconductor lasers are integrated on a semiconductor multi-layer crystal that includes an active layer in which the band gap energy varies in one direction. By means of this arrangement a plurality of semiconductor lasers, which differ in their respective oscillating wavelengths over a relatively broad range, can be formed on a common substrate.

REFERENCES:
patent: 4199385 (1980-04-01), Hung et al.
patent: 4211586 (1980-07-01), Fang et al.
A. Y. Cho, "Recent Developments in Molecular Beam Epitaxy (MBE)", Journal of Vacuum Science & Technology, vol. 16, No. 2, 1979, pp. 275-284.
K. Aiki et al., "Frequency Multiplexing Light Source With Monolithically Integrated Distributed-Feedback Diode Lasers", APL, vol. 29, No. 8, 15 Oct. 1976, pp. 506-508.
A. P. Bogatov et al., "Radiative Characteristics of InP-GaInPAs Laser Heterostructures", Sov. Phys. Semicond., vol. 9, No. 10, pp. 1282-1285.
M. B. Panish, "Phase Equilibria in the System Al-Ga-As-Sn and Electrical Properties of Sn-Doped Liquid Phase Epitaxial Al.sub.x Ga.sub.1-x As", J. Appl. Phys., vol. 44, No. 6, Jun. 1973, pp. 2667-2675.

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